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ट्रांजिस्टर - बाइपोलर (BJT) - सिंगल

निर्माता भाग संख्या	उपलब्धता	मूल्य	मात्रा	डेटाशीत	Packaging	Series	ProductStatus	TransistorType	Current-Collector(Ic)(Max)	Voltage-CollectorEmitterBreakdown(Max)	VceSaturation(Max)@IbIc	Current-CollectorCutoff(Max)	DCCurrentGain(hFE)(Min)@IcVce	Power-Max	Frequency-Transition	OperatingTemperature	MountingType
KSA1015OTA TRANS PNP 50V 0.15A TO92-3 onsemi	2,283	-	RFQ	डेटाशीत	Tape & Box (TB)	-	Obsolete	PNP	150 mA	50 V	300mV @ 10mA, 100mA	100nA (ICBO)	70 @ 2mA, 6V	400 mW	80MHz	150°C (TJ)	Through Hole
2SD2257(CANO,Q,M) TRANS NPN 100V 3A TO220NIS Toshiba Semiconductor and Storage	3,686	-	RFQ	डेटाशीत	Bulk	-	Obsolete	NPN	3 A	100 V	1.5V @ 1.5mA, 1.5A	10µA (ICBO)	2000 @ 2A, 2V	2 W	-	150°C (TJ)	Through Hole
KSE803S TRANS NPN DARL 80V 4A TO126-3 onsemi	2,577	-	RFQ	डेटाशीत	Bulk	-	Obsolete	NPN - Darlington	4 A	80 V	2.8V @ 40mA, 2A	100µA	750 @ 2A, 3V	40 W	-	150°C (TJ)	Through Hole
KSE800STSSTU TRANS NPN DARL 60V 4A TO126-3 onsemi	2,033	-	RFQ	डेटाशीत	Tube	-	Obsolete	NPN - Darlington	4 A	60 V	2.5V @ 30mA, 1.5A	100µA	750 @ 1.5A, 3V	40 W	-	150°C (TJ)	Through Hole
KSE800S TRANS NPN DARL 60V 4A TO126-3 onsemi	2,437	-	RFQ	डेटाशीत	Bulk	-	Obsolete	NPN - Darlington	4 A	60 V	2.5V @ 30mA, 1.5A	100µA	750 @ 1.5A, 3V	40 W	-	150°C (TJ)	Through Hole
2SD2257(Q,M) TRANS NPN 100V 3A TO220NIS Toshiba Semiconductor and Storage	2,559	-	RFQ	डेटाशीत	Bulk	-	Obsolete	NPN	3 A	100 V	1.5V @ 1.5mA, 1.5A	10µA (ICBO)	2000 @ 2A, 2V	2 W	-	150°C (TJ)	Through Hole
KSE802STU TRANS NPN DARL 80V 4A TO126-3 onsemi	2,083	-	RFQ	डेटाशीत	Tube	-	Obsolete	NPN - Darlington	4 A	80 V	2.5V @ 30mA, 1.5A	100µA	750 @ 1.5A, 3V	40 W	-	150°C (TJ)	Through Hole
2SD2257,KEHINQ(J TRANS NPN 100V 3A TO220NIS Toshiba Semiconductor and Storage	3,737	-	RFQ	डेटाशीत	Bulk	-	Obsolete	NPN	3 A	100 V	1.5V @ 1.5mA, 1.5A	10µA (ICBO)	2000 @ 2A, 2V	2 W	-	150°C (TJ)	Through Hole
KSE801STU TRANS NPN DARL 60V 4A TO126-3 onsemi	3,104	-	RFQ	डेटाशीत	Tube	-	Obsolete	NPN - Darlington	4 A	60 V	2.8V @ 40mA, 2A	100µA	750 @ 2A, 3V	40 W	-	150°C (TJ)	Through Hole
KSE803STU TRANS NPN DARL 80V 4A TO126-3 onsemi	3,274	-	RFQ	डेटाशीत	Tube	-	Obsolete	NPN - Darlington	4 A	80 V	2.8V @ 40mA, 2A	100µA	750 @ 2A, 3V	40 W	-	150°C (TJ)	Through Hole
2SD2257,NIKKIQ(J TRANS NPN 100V 3A TO220NIS Toshiba Semiconductor and Storage	3,007	-	RFQ	डेटाशीत	Bulk	-	Obsolete	NPN	3 A	100 V	1.5V @ 1.5mA, 1.5A	10µA (ICBO)	2000 @ 2A, 2V	2 W	-	150°C (TJ)	Through Hole
KSC1507YTU TRANS NPN 300V 200UA TO220-3 onsemi	3,056	-	RFQ	डेटाशीत	Tube	-	Obsolete	NPN	200 µA	300 V	2V @ 5mA, 50mA	100µA (ICBO)	120 @ 10mA, 10V	15 W	80MHz	150°C (TJ)	Through Hole
KSC1507Y TRANS NPN 300V 200UA TO220-3 onsemi	3,456	-	RFQ	डेटाशीत	Bulk	-	Obsolete	NPN	200 µA	300 V	2V @ 5mA, 50mA	100µA (ICBO)	120 @ 10mA, 10V	15 W	80MHz	150°C (TJ)	Through Hole
2SD2257,Q(J TRANS NPN 100V 3A TO220NIS Toshiba Semiconductor and Storage	3,823	-	RFQ	डेटाशीत	Bulk	-	Obsolete	NPN	3 A	100 V	1.5V @ 1.5mA, 1.5A	10µA (ICBO)	2000 @ 2A, 2V	2 W	-	150°C (TJ)	Through Hole
KSC1507YTSTU TRANS NPN 300V 200UA TO220-3 onsemi	2,115	-	RFQ	डेटाशीत	Tube	-	Obsolete	NPN	200 µA	300 V	2V @ 5mA, 50mA	100µA (ICBO)	120 @ 10mA, 10V	15 W	80MHz	150°C (TJ)	Through Hole
KSC1507R TRANS NPN 300V 200UA TO220-3 onsemi	2,208	-	RFQ	डेटाशीत	Bulk	-	Obsolete	NPN	200 µA	300 V	2V @ 5mA, 50mA	100µA (ICBO)	40 @ 10mA, 10V	15 W	80MHz	150°C (TJ)	Through Hole
2SD2695(T6CANO,A,F TRANS NPN 60V 2A TO92MOD Toshiba Semiconductor and Storage	2,096	-	RFQ	डेटाशीत	Bulk	-	Obsolete	NPN	2 A	60 V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900 mW	100MHz	150°C (TJ)	Through Hole
KSC1507O TRANS NPN 300V 200UA TO220-3 onsemi	2,694	-	RFQ	डेटाशीत	Bulk	-	Obsolete	NPN	200 µA	300 V	2V @ 5mA, 50mA	100µA (ICBO)	70 @ 10mA, 10V	15 W	80MHz	150°C (TJ)	Through Hole
KSC1507OTU TRANS NPN 300V 200UA TO220-3 onsemi	2,844	-	RFQ	डेटाशीत	Tube	-	Obsolete	NPN	200 µA	300 V	2V @ 5mA, 50mA	100µA (ICBO)	70 @ 10mA, 10V	15 W	80MHz	150°C (TJ)	Through Hole
2SD2695(T6CANO,F,M TRANS NPN 60V 2A TO92MOD Toshiba Semiconductor and Storage	3,010	-	RFQ	डेटाशीत	Bulk	-	Obsolete	NPN	2 A	60 V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900 mW	100MHz	150°C (TJ)	Through Hole