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ऑप्टोआइसोलेटर - ट्रांजिस्टर, फोटोवोल्टिक आउटपुट

निर्माता भाग संख्या	उपलब्धता	मूल्य	मात्रा	डेटाशीत	Packaging	Series	ProductStatus	NumberofChannels	Voltage-Isolation	CurrentTransferRatio(Min)	CurrentTransferRatio(Max)	TurnOn/TurnOffTime(Typ)	Rise/FallTime(Typ)	InputType	OutputType	Voltage-Output(Max)	Current-Output/Channel	Voltage-Forward(Vf)(Typ)	Current-DCForward(If)(Max)	VceSaturation(Max)	OperatingTemperature	MountingType
TLP628MF(E TR COUPLER; DIP4 WIDE CREEPAGE; Toshiba Semiconductor and Storage	3,667	-	RFQ	डेटाशीत	Tube	-	Active	1	5000Vrms	50% @ 5mA	600% @ 5mA	10µs, 10µs	5.5µs, 10µs	DC	Transistor	350V	50mA	1.25V	50 mA	400mV	-55°C ~ 125°C	Through Hole
TLP628M(GB,E TR COUPLER; DIP4; ROHS; Toshiba Semiconductor and Storage	3,838	-	RFQ	डेटाशीत	Tube	-	Active	1	5000Vrms	100% @ 5mA	600% @ 5mA	10µs, 10µs	5.5µs, 10µs	DC	Transistor	350V	50mA	1.25V	50 mA	400mV	-55°C ~ 125°C	Through Hole
TLP627M(LF1,E OPTOIOSOLATOR DARLINGTON Toshiba Semiconductor and Storage	2,581	-	RFQ		Tube	-	Active	1	5000Vrms	1000% @ 1mA	-	110µs, 30µs	60µs, 30µs	DC	Darlington	300V	150mA	1.25V	50 mA	1.2V	-55°C ~ 110°C	Surface Mount
TLP627M(E OPTOIOSOLATOR DARLINGTON Toshiba Semiconductor and Storage	2,618	-	RFQ		Tube	-	Active	1	5000Vrms	-	1000% @ 1mA	110µs, 30µs	60µs, 30µs	DC	Darlington	300V	150mA	1.25V	50 mA	1.2V	-55°C ~ 110°C	Through Hole
TLP627M(D4,E OPTOIOSOLATOR DARLINGTON 4DIP Toshiba Semiconductor and Storage	3,346	-	RFQ	डेटाशीत	Tube	-	Active	1	5000Vrms	1000% @ 1mA	-	110µs, 30µs	60µs, 30µs	DC	Darlington	300V	150mA	1.25V	50 mA	1.2V	-55°C ~ 110°C	Through Hole
TLP627MF(E 264-TLP627F-2(F)-ND Toshiba Semiconductor and Storage	2,875	-	RFQ	डेटाशीत	Tube	-	Active	1	5000Vrms	1000% @ 1mA	-	110µs, 30µs	60µs, 30µs	DC	Darlington	300V	150mA	1.25V	50 mA	1.2V	-55°C ~ 110°C	Surface Mount
TLP627MF(D4,E OPTOIOSOLATOR DARL F TYPE 4DIP Toshiba Semiconductor and Storage	2,339	-	RFQ	डेटाशीत	Tube	-	Active	1	5000Vrms	1000% @ 1mA	-	110µs, 30µs	60µs, 30µs	DC	Darlington	300V	150mA	1.25V	50 mA	1.2V	-55°C ~ 110°C	Through Hole
TLP627M(LF5,E DC INPUT PHOTOCOUPLER; DIP4 Toshiba Semiconductor and Storage	3,067	-	RFQ	डेटाशीत	Tube	-	Active	1	5000Vrms	1000% @ 1mA	-	110µs, 30µs	60µs, 30µs	DC	Darlington	300V	150mA	1.25V	50 mA	1.2V	-55°C ~ 110°C	Surface Mount
TLP627M(D4-LF1,E DC INPUT PHOTOCOUPLER; DIP4; VDE Toshiba Semiconductor and Storage	2,321	-	RFQ	डेटाशीत	Tube	-	Active	1	5000Vrms	1000% @ 1mA	-	110µs, 30µs	60µs, 30µs	DC	Darlington	300V	150mA	1.25V	50 mA	1.2V	-55°C ~ 110°C	Surface Mount
TLP627MF(LF4,E DC INPUT PHOTOCOUPLER; DIP4; WID Toshiba Semiconductor and Storage	2,404	-	RFQ	डेटाशीत	Tube	-	Active	1	5000Vrms	1000% @ 1mA	-	110µs, 30µs	60µs, 30µs	DC	Darlington	300V	150mA	1.25V	50 mA	1.2V	-55°C ~ 110°C	Surface Mount
TLP627MF(D4-F4,E DC INPUT PHOTOCOUPLER; DIP4; WID Toshiba Semiconductor and Storage	3,056	-	RFQ	डेटाशीत	Tube	-	Active	1	5000Vrms	1000% @ 1mA	-	110µs, 30µs	60µs, 30µs	DC	Darlington	300V	150mA	1.25V	50 mA	1.2V	-55°C ~ 110°C	Through Hole
TLP627M(D4-LF5,E DC INPUT PHOTOCOUPLER; DIP4; VDE Toshiba Semiconductor and Storage	2,067	-	RFQ	डेटाशीत	Tube	-	Active	1	5000Vrms	1000% @ 1mA	-	110µs, 30µs	60µs, 30µs	DC	Darlington	300V	150mA	1.25V	50 mA	1.2V	-55°C ~ 110°C	Surface Mount
TLP2309(TPR,E X36 PB-F HIGH SPEED LOGIC OUTPUT Toshiba Semiconductor and Storage	2,704	-	RFQ	डेटाशीत	Tape & Reel (TR)	-	Active	1	3750Vrms	15% @ 16mA	-	1µs, 1µs (Max)	-	DC	Transistor	20V	8mA	1.55V	25 mA	-	-40°C ~ 110°C	Surface Mount
TLP293-4(GBTPR,E OPTOISOLATOR 3.75KV TRANS SO16 Toshiba Semiconductor and Storage	3,212	-	RFQ	डेटाशीत	Tape & Reel (TR),Cut Tape (CT)	-	Active	4	3750Vrms	100% @ 5mA	600% @ 5mA	3µs, 3µs	2µs, 3µs	DC	Transistor	80V	50mA	1.25V	50 mA	300mV	-55°C ~ 125°C	Surface Mount
TLP109(IGM-TPL,E OPTOISO 3.75KV TRANS 6-SO 5 LEAD Toshiba Semiconductor and Storage	2,084	-	RFQ	डेटाशीत	Tape & Reel (TR),Cut Tape (CT)	-	Active	1	3750Vrms	25% @ 10mA	75% @ 10mA	450ns, 450ns	-	DC	Transistor	20V	8mA	1.64V	20 mA	-	-55°C ~ 125°C	Surface Mount
TLP109(V4-TPL,E OPTOISO 3.75KV TRANS 6-SO 5 LEAD Toshiba Semiconductor and Storage	2,226	-	RFQ	डेटाशीत	Tape & Reel (TR),Cut Tape (CT)	-	Active	1	3750Vrms	20% @ 16mA	-	800ns, 800ns (Max)	-	DC	Transistor	20V	8mA	1.64V	20 mA	-	-55°C ~ 125°C	Surface Mount
TLP185(GB,SE X36 PB PHOTOCOUPLER SO6 ROHS BUL Toshiba Semiconductor and Storage	3,248	-	RFQ	डेटाशीत	Tube	-	Active	1	3750Vrms	100% @ 5mA	600% @ 5mA	3µs, 3µs	2µs, 3µs	DC	Transistor	80V	50mA	1.25V	50 mA	300mV	-55°C ~ 110°C	Surface Mount
TLP185(SE X36 PB-F PHOTOCOUPLER SO6 BULK Toshiba Semiconductor and Storage	3,986	-	RFQ	डेटाशीत	Tube	-	Active	1	3750Vrms	50% @ 5mA	600% @ 5mA	3µs, 3µs	2µs, 3µs	DC	Transistor	80V	50mA	1.25V	50 mA	300mV	-55°C ~ 110°C	Surface Mount
TLP292-4(V4GBTRE OPTOISOLATOR 3.75KV TRANS SO16 Toshiba Semiconductor and Storage	3,519	-	RFQ	डेटाशीत	Tape & Reel (TR),Cut Tape (CT)	-	Active	4	3750Vrms	100% @ 5mA	600% @ 5mA	3µs, 3µs	2µs, 3µs	AC, DC	Transistor	80V	50mA	1.25V	50 mA	300mV	-55°C ~ 125°C	Surface Mount
TLP187(E X36 PB-F PHOTOCOUPLER ROHS SO6 B Toshiba Semiconductor and Storage	2,685	-	RFQ	डेटाशीत	Tube	-	Active	1	3750Vrms	1000% @ 1mA	-	50µs, 15µs	40µs, 15µs	DC	Darlington	300V	150mA	1.25V	50 mA	1.2V	-55°C ~ 110°C	Surface Mount