फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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S4M M6GDIODE GEN PURP 4A DO214AB Taiwan Semiconductor Corporation |
2,864 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 100 µA @ 1000 V | - | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | |
|
HS1A R3GDIODE GEN PURP 50V 1A DO214AC Taiwan Semiconductor Corporation |
2,786 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
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HS1AL R3GDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
2,359 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
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HS1AL RFGDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
3,740 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
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HS1BL R3GDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
3,832 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
HS1BL RFGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
3,766 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
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HS1DL R3GDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
3,583 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
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ES15DLW RVGDIODE, SUPER FAST Taiwan Semiconductor Corporation |
3,787 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 24pF @ 4V, 1MHz | 35 ns | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 950 mV @ 1.5 A | |
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HS1DL RFGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
2,184 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
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ES15GLW RVGDIODE, SUPER FAST Taiwan Semiconductor Corporation |
3,560 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 21pF @ 4V, 1MHz | 35 ns | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
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HS1F R3GDIODE GEN PURP 300V 1A DO214AC Taiwan Semiconductor Corporation |
3,248 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
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ES15GLWHRVGDIODE, SUPER FAST Taiwan Semiconductor Corporation |
3,560 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 21pF @ 4V, 1MHz | 35 ns | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A |
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HS1FL R3GDIODE GEN PURP 300V 1A SUB SMA Taiwan Semiconductor Corporation |
2,056 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
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ES15JLWHRVGDIODE, SUPER FAST Taiwan Semiconductor Corporation |
3,599 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.7 V @ 1.5 A |
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HS1FL RFGDIODE GEN PURP 300V 1A SUB SMA Taiwan Semiconductor Corporation |
3,830 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
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S1DLS RQGDIODE, 1.2A, 200V, SOD-123HE Taiwan Semiconductor Corporation |
2,350 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 200 V | 200 V | 1.2A | -55°C ~ 175°C | 1.3 V @ 1.2 A | |
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HS1GL RFGDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
2,262 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
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S1DLS RVGDIODE, 1.2A, 200V, SOD-123HE Taiwan Semiconductor Corporation |
2,259 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 200 V | 200 V | 1.2A | -55°C ~ 175°C | 1.3 V @ 1.2 A | |
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HS1JL R3GDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
2,508 | - |
RFQ |
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Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
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S1DLSHRQGDIODE, 1.2A, 200V, AEC-Q101, SOD Taiwan Semiconductor Corporation |
3,764 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 200 V | 200 V | 1.2A | -55°C ~ 175°C | 1.3 V @ 1.2 A |