फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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SRA1640DIODE SCHOTTKY 40V 16A TO220AC Taiwan Semiconductor Corporation |
2,849 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 16A (DC) | -55°C ~ 125°C | 550 mV @ 16 A | ||
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S4B R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,793 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 100 V | 100 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | ||
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HERA802GDIODE GEN PURP 8A 100V TO220AC Taiwan Semiconductor Corporation |
3,561 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 8A (DC) | -55°C ~ 150°C | 1 V @ 8 A | ||
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MUR860HDIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation |
3,931 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 600 V | 600 V | 8A (DC) | -55°C ~ 175°C | 1.7 V @ 8 A | |
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S1A R3GDIODE GEN PURP 50V 1A DO214AC Taiwan Semiconductor Corporation |
2,141 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 50 V | 50 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
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ES3J R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,873 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | ||
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HERAF807GDIODE GEN PURP 8A 800V IT0-220AC Taiwan Semiconductor Corporation |
2,363 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 80 ns | 10 µA @ 800 V | 800 V | 8A (DC) | -55°C ~ 150°C | 1.7 V @ 8 A | ||
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MUR360SHDIODE GEN PURP 600V 3A DO214AB Taiwan Semiconductor Corporation |
3,020 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 600 V | 600 V | 3A (DC) | -55°C ~ 175°C | 1.25 V @ 3 A | |
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SR003DIODE SCHOTTKY 0.5A 90V DO-41 Taiwan Semiconductor Corporation |
2,890 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 110pF @ 4V, 1MHz | - | 500 µA @ 30 V | 30 V | 500mA (DC) | -55°C ~ 125°C | 550 mV @ 500 mA | ||
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S1D R3GDIODE GEN PURP 200V 1A DO214AC Taiwan Semiconductor Corporation |
3,699 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
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S5K M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,141 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 800 V | 800 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | ||
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SR505DIODE SCHOTTKY 5A 50V DO-201AD Taiwan Semiconductor Corporation |
3,420 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 5A (DC) | -55°C ~ 150°C | 700 mV @ 5 A | ||
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SRA1690HDIODE SCHOTTKY 90V 16A TO220AC Taiwan Semiconductor Corporation |
3,543 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 16A (DC) | -55°C ~ 150°C | 920 mV @ 16 A | |
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MUR440S M6DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
2,252 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 4A | -55°C ~ 175°C | 1.25 V @ 4 A | ||
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SF17GHDIODE GEN PURP 500V 1A DO-41 Taiwan Semiconductor Corporation |
3,131 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 1A (DC) | -55°C ~ 150°C | 1.7 V @ 1 A | |
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SFAF1006GHDIODE GEN PURP 10A 400V TO220AC Taiwan Semiconductor Corporation |
2,794 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 140pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 10A (DC) | -55°C ~ 150°C | 1.3 V @ 10 A | |
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RS3K M6DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
3,007 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 500 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | ||
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MBRF5150HDIODE SCHOTTKY 150V 5A ITO220AC Taiwan Semiconductor Corporation |
3,002 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 5A (DC) | -55°C ~ 150°C | 1.02 V @ 5 A | |
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RS3BDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
2,851 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 150 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | ||
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S5GBHM4GDIODE GEN PURP 400V 5A DO214AA Taiwan Semiconductor Corporation |
3,425 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 5A | -55°C ~ 150°C | 1.1 V @ 5 A |