फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SSL34 R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,482 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A (DC) | -55°C ~ 125°C | 410 mV @ 3 A | ||
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S5D R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,137 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 200 V | 200 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | ||
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6A05GHDIODE GEN PURP 6A 50V R-6 Taiwan Semiconductor Corporation |
3,946 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 6A (DC) | -55°C ~ 150°C | 1.1 V @ 6 A | |
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MUR190ADIODE GEN PURP 1A 900V DO-15 Taiwan Semiconductor Corporation |
3,870 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 900 V | 900 V | 1A (DC) | -55°C ~ 150°C | 1.7 V @ 1 A | ||
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HS5D R7DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
2,637 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 5A (DC) | -55°C ~ 150°C | 1 V @ 5 A | ||
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1N4003GHDIODE GEN PURP 1A 200V DO-41 Taiwan Semiconductor Corporation |
3,035 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1A (DC) | -55°C ~ 150°C | 1 V @ 1 A | |
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UG5JDIODE GEN PURP 5A 600V TO220AC Taiwan Semiconductor Corporation |
2,317 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 ns | 30 µA @ 600 V | 600 V | 5A (DC) | -55°C ~ 150°C | 3 V @ 5 A | ||
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SS34 M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,630 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A (DC) | -55°C ~ 125°C | 500 mV @ 3 A | ||
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SRAF540HDIODE SCHOTTKY 40V 5A ITO220AC Taiwan Semiconductor Corporation |
3,402 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 5A (DC) | -55°C ~ 125°C | 550 mV @ 5 A | |
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HERA801GDIODE GEN PURP 8A 50V TO220AC Taiwan Semiconductor Corporation |
3,640 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 8A (DC) | -55°C ~ 150°C | 1 V @ 8 A | ||
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S12KC M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,057 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 78pF @ 4V, 1MHz | - | 1 µA @ 800 V | 800 V | 12A (DC) | -55°C ~ 150°C | 1.1 V @ 12 A | ||
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SR809DIODE SCHOTTKY 8A 90V DO-201AD Taiwan Semiconductor Corporation |
3,299 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 8A (DC) | -55°C ~ 150°C | 920 mV @ 8 A | ||
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SF11GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,662 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 150°C | 950 mV @ 1 A | ||
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MUR360S R6DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
3,655 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 50 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.25 V @ 3 A | ||
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SFA1001GHDIODE GEN PURP 50V 10A TO220AC Taiwan Semiconductor Corporation |
3,892 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 10A (DC) | -55°C ~ 150°C | 975 mV @ 10 A | |
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1N5400GDIODE GEN PURP 3A 50V DO-201AD Taiwan Semiconductor Corporation |
2,475 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 3A (DC) | -55°C ~ 150°C | 1.1 V @ 3 A | ||
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RS3G R6DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
2,593 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 150 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | ||
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ESH3C V6GDIODE GEN PURP 150V 3A DO214AB Taiwan Semiconductor Corporation |
3,136 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 20 ns | 5 µA @ 150 V | 150 V | 3A | -55°C ~ 175°C | - | |
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ES3GDIODE GEN PURP 400V 3A DO214AB Taiwan Semiconductor Corporation |
2,688 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | - | |
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ESH3D V6GDIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation |
3,187 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 20 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | - |