फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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SF1001G C0GDIODE GEN PURP 50V 10A TO220AB Taiwan Semiconductor Corporation |
3,698 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 10A | -55°C ~ 150°C | 975 mV @ 5 A | |
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SS29HM4GDIODE SCHOTTKY 90V 2A DO214AA Taiwan Semiconductor Corporation |
3,329 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A |
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UF1AHA0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,549 | - |
RFQ |
![]() डेटाशीत |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
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SR505 A0GDIODE SCHOTTKY 50V 5A DO201AD Taiwan Semiconductor Corporation |
3,760 | - |
RFQ |
![]() डेटाशीत |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 700 mV @ 5 A | |
|
S1DL M2GDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
2,154 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
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SF31GHB0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
3,488 | - |
RFQ |
![]() डेटाशीत |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A |
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SF1001GHC0GDIODE GEN PURP 50V 10A TO220AB Taiwan Semiconductor Corporation |
2,976 | - |
RFQ |
![]() डेटाशीत |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 10A | -55°C ~ 150°C | 975 mV @ 5 A |
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SS29L M2GDIODE SCHOTTKY 90V 2A SUB SMA Taiwan Semiconductor Corporation |
2,420 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A | |
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UF1B A0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,168 | - |
RFQ |
![]() डेटाशीत |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
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SR505HA0GDIODE SCHOTTKY 50V 5A DO201AD Taiwan Semiconductor Corporation |
2,584 | - |
RFQ |
![]() डेटाशीत |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 700 mV @ 5 A |
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S1DL MHGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
3,413 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
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SF3004PT C0GDIODE GEN PURP 200V 30A TO247AD Taiwan Semiconductor Corporation |
2,039 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 30A | -55°C ~ 150°C | 950 mV @ 15 A | |
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BAS19 RFGDIODE GEN PURP 100V 200MA SOT23 Taiwan Semiconductor Corporation |
2,570 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 100 V | 100 V | 200mA | -65°C ~ 150°C | 1.25 V @ 200 mA | |
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BAS20 RFGDIODE GEN PURP 150V 200MA SOT23 Taiwan Semiconductor Corporation |
2,950 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 150 V | 150 V | 200mA | -65°C ~ 150°C | 1.25 V @ 200 mA | |
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BAS21 RFGDIODE GEN PURP 250V 200MA SOT23 Taiwan Semiconductor Corporation |
3,646 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 1V, 1MHz | 50 ns | 100 nA @ 200 V | 250 V | 200mA | -55°C ~ 150°C | 1.25 V @ 200 mA | |
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1N4004GHR0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,128 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
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SF32G B0GDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
3,312 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
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SF1002G C0GDIODE GEN PURP 100V 10A TO220AB Taiwan Semiconductor Corporation |
2,324 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 10A | -55°C ~ 150°C | 975 mV @ 5 A | |
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SS29L MHGDIODE SCHOTTKY 90V 2A SUB SMA Taiwan Semiconductor Corporation |
3,682 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A | |
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UF1BHA0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,439 | - |
RFQ |
![]() डेटाशीत |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |