फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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HER303G R0GDIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation |
3,765 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
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SFS1007G MNGDIODE GEN PURP 500V 10A TO263AB Taiwan Semiconductor Corporation |
3,232 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 35 ns | 1 µA @ 500 V | 500 V | 10A | -55°C ~ 150°C | 1.7 V @ 5 A | |
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ES1BLHMHGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
3,525 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
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SR005 R1GDIODE SCHOTTKY 50V 500MA DO204AL Taiwan Semiconductor Corporation |
2,491 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 80pF @ 4V, 1MHz | - | 500 µA @ 50 V | 50 V | 500mA | -55°C ~ 150°C | 700 mV @ 500 mA | |
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HER601G R0GDIODE GEN PURP 50V 6A R-6 Taiwan Semiconductor Corporation |
3,883 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
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SFS1007GHMNGDIODE GEN PURP 500V 10A TO263AB Taiwan Semiconductor Corporation |
2,050 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 35 ns | 1 µA @ 500 V | 500 V | 10A | -55°C ~ 150°C | 1.7 V @ 5 A |
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ES1C M2GDIODE GEN PURP 150V 1A DO214AC Taiwan Semiconductor Corporation |
2,007 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 16pF @ 1V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
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SR005HR1GDIODE SCHOTTKY 50V 500MA DO204AL Taiwan Semiconductor Corporation |
2,742 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 80pF @ 4V, 1MHz | - | 500 µA @ 50 V | 50 V | 500mA | -55°C ~ 150°C | 700 mV @ 500 mA |
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HER602G R0GDIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation |
3,686 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
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SFS1008G MNGDIODE GEN PURP 600V 10A TO263AB Taiwan Semiconductor Corporation |
3,976 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 35 ns | 1 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 1.7 V @ 5 A | |
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ES1CHM2GDIODE GEN PURP 150V 1A DO214AC Taiwan Semiconductor Corporation |
2,358 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 16pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
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SR006 R1GDIODE SCHOTTKY 60V 500MA DO204AL Taiwan Semiconductor Corporation |
2,018 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 80pF @ 4V, 1MHz | - | 500 µA @ 60 V | 60 V | 500mA | -55°C ~ 150°C | 700 mV @ 500 mA | |
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HER603G R0GDIODE GEN PURP 200V 6A R-6 Taiwan Semiconductor Corporation |
3,015 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
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SFS1008GHMNGDIODE GEN PURP 600V 10A TO263AB Taiwan Semiconductor Corporation |
2,070 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 35 ns | 1 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 1.7 V @ 5 A |
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ES1CL M2GDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
2,195 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
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SR006HR1GDIODE SCHOTTKY 60V 500MA DO204AL Taiwan Semiconductor Corporation |
3,132 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 80pF @ 4V, 1MHz | - | 500 µA @ 60 V | 60 V | 500mA | -55°C ~ 150°C | 700 mV @ 500 mA |
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HT11G R0GDIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation |
3,076 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
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SFS1601G MNGDIODE GEN PURP 50V 16A TO263AB Taiwan Semiconductor Corporation |
2,691 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 16A | -55°C ~ 150°C | 975 mV @ 8 A | |
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SS320LWHRVGDIODE SCHOTTKY 200V 3A SOD123W Taiwan Semiconductor Corporation |
3,389 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
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ES1CL MHGDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
3,440 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |