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| फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BYD17D,115DIODE AVALANCHE 200V 1.5A MELF NXP USA Inc. |
2,781 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Obsolete | Surface Mount | 21pF @ 0V, 1MHz | 3 µs | 1 µA @ 200 V | 200 V | 1.5A | -65°C ~ 175°C | 1.05 V @ 1 A | |
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BYD17G,115DIODE AVALANCHE 400V 1.5A MELF NXP USA Inc. |
3,122 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Obsolete | Surface Mount | 21pF @ 0V, 1MHz | 3 µs | 1 µA @ 400 V | 400 V | 1.5A | -65°C ~ 175°C | 1.05 V @ 1 A | |
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|
BYD17J,115DIODE AVALANCHE 600V 1.5A MELF NXP USA Inc. |
3,567 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Obsolete | Surface Mount | 21pF @ 0V, 1MHz | 3 µs | 1 µA @ 600 V | 600 V | 1.5A | -65°C ~ 175°C | 1.05 V @ 1 A | |
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BYD37M,115DIODE AVALANCHE 1KV 600MA MELF NXP USA Inc. |
3,312 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Obsolete | Surface Mount | 20pF @ 0V, 1MHz | 300 ns | 1 µA @ 1000 V | 1000 V | 600mA | -65°C ~ 175°C | 1.3 V @ 1 A | |
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BYD77B,115DIODE AVALANCHE 100V 850MA MELF NXP USA Inc. |
3,711 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Obsolete | Surface Mount | 50pF @ 0V, 1MHz | 25 ns | 1 µA @ 100 V | 100 V | 850mA | -65°C ~ 175°C | 980 mV @ 1 A | |
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|
BYD77D,115DIODE AVALANCHE 200V 850MA MELF NXP USA Inc. |
3,517 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Obsolete | Surface Mount | 50pF @ 0V, 1MHz | 25 ns | 1 µA @ 200 V | 200 V | 850mA | -65°C ~ 175°C | 980 mV @ 1 A | |
|
BAT254,115DIODE SCHOTTKY 30V 200MA SOD2 NXP USA Inc. |
2,549 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 800 mV @ 100 mA | |
|
|
PRLL5818,115DIODE SCHOTTKY 30V 1A MELF NXP USA Inc. |
3,241 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 50pF @ 4V, 1MHz | - | 1 mA @ 30 V | 30 V | 1A | 125°C (Max) | 550 mV @ 1 A | |
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BYD17K,135DIODE AVALANCHE 800V 1.5A MELF NXP USA Inc. |
2,338 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Obsolete | Surface Mount | 21pF @ 0V, 1MHz | 3 µs | 1 µA @ 800 V | 800 V | 1.5A | -65°C ~ 175°C | 1.05 V @ 1 A | |
|
NUR460,133DIODE GEN PURP 600V 4A DO201AD NXP USA Inc. |
2,515 | - |
RFQ |
डेटाशीत |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 60 ns | 50 µA @ 600 V | 600 V | 4A | 150°C (Max) | 1.28 V @ 4 A | |
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BAS116T,115DIODE GEN PURP 75V 215MA SC75 NXP USA Inc. |
2,492 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 2pF @ 0V, 1MHz | 3 µs | 5 nA @ 75 V | 75 V | 215mA (DC) | 150°C (Max) | 1.25 V @ 150 mA | |
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BAT54T,115DIODE SCHOTTKY 30V 200MA SC75 NXP USA Inc. |
3,701 | - |
RFQ |
डेटाशीत |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 150°C (Max) | 800 mV @ 100 mA | |
|
BY329-1200,127DIODE GEN PURP 1.2KV 8A TO220AC NXP USA Inc. |
3,648 | - |
RFQ |
डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 135 ns | 1 mA @ 1000 V | 1200 V | 8A | 150°C (Max) | 1.85 V @ 20 A | |
|
BY329X-1500,127DIODE GEN PURP 1.5KV 6A TO220F NXP USA Inc. |
3,556 | - |
RFQ |
डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 230 ns | - | 1500 V | 6A (DC) | 150°C (Max) | 1.45 V @ 6.5 A | |
|
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BY359X-1500,127DIODE GEN PURP 1.5KV 10A TO220F NXP USA Inc. |
2,732 | - |
RFQ |
डेटाशीत |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 600 ns | 100 µA @ 1300 V | 1500 V | 10A (DC) | 150°C (Max) | 1.8 V @ 20 A | |
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BY459-1500,127DIODE GEN PURP 1.5KV 12A TO220AC NXP USA Inc. |
3,911 | - |
RFQ |
डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 350 ns | - | 1500 V | 12A (DC) | 150°C (Max) | 1.3 V @ 6.5 A | |
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BY459X-1500S,127DIODE GEN PURP 1.5KV 10A TO220F NXP USA Inc. |
3,715 | - |
RFQ |
डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 220 ns | 250 µA @ 1300 V | 1500 V | 10A (DC) | 150°C (Max) | 1.35 V @ 6.5 A | |
|
NUR460/L01,112DIODE GEN PURP 600V 4A DO201AD NXP USA Inc. |
2,244 | - |
RFQ |
डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 65 ns | 50 µA @ 600 V | 600 V | 4A | 150°C (Max) | 1.28 V @ 4 A | |
|
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NUR460/L04,112DIODE GEN PURP 600V 4A DO201AD NXP USA Inc. |
2,003 | - |
RFQ |
डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 65 ns | 50 µA @ 600 V | 600 V | 4A | 150°C (Max) | 1.28 V @ 4 A | |
|
BYC8B-600PQPDIODE GEN PURP 600V 8A NXP USA Inc. |
2,806 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 18 ns | 20 µA @ 600 V | 600 V | 8A | 175°C (Max) | 3.4 V @ 8 A |
- 1500+ दैनिक औसत RFQ
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