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डायोड-रेक्टीफायर्स-सिंगल

निर्माता भाग संख्या	उपलब्धता	मूल्य	मात्रा	डेटाशीत	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
IRD3CH101DB6 DIODE GEN PURP 1.2KV 200A DIE Infineon Technologies	2,822	-	RFQ	डेटाशीत	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	360 ns	3.6 µA @ 1200 V	1200 V	200A	-40°C ~ 175°C	2.7 V @ 200 A
IRD3CH101DD6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies	3,263	-	RFQ	डेटाशीत	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IRD3CH101DF6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies	2,974	-	RFQ	डेटाशीत	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IRD3CH11DB6 DIODE GEN PURP 1.2KV 25A DIE Infineon Technologies	3,331	-	RFQ	डेटाशीत	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	190 ns	700 nA @ 1200 V	1200 V	25A	-40°C ~ 150°C	2.7 V @ 25 A
IDW10G65C5XKSA1 DIODE SCHOTTKY 650V 10A TO247-3 Infineon Technologies	2,032	-	RFQ	डेटाशीत	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	300pF @ 1V, 1MHz	0 ns	180 µA @ 650 V	650 V	10A (DC)	-55°C ~ 175°C	1.7 V @ 10 A
IRD3CH11DD6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies	2,381	-	RFQ	डेटाशीत	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IRD3CH11DF6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies	3,311	-	RFQ	डेटाशीत	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IRD3CH16DB6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies	2,304	-	RFQ	डेटाशीत	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IRD3CH16DD6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies	2,438	-	RFQ	डेटाशीत	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IRD3CH16DF6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies	3,725	-	RFQ	डेटाशीत	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IRD3CH24DB6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies	3,498	-	RFQ	डेटाशीत	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IRD3CH24DD6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies	3,738	-	RFQ	डेटाशीत	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IRD3CH24DF6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies	2,842	-	RFQ	डेटाशीत	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IRD3CH31DB6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies	2,761	-	RFQ	डेटाशीत	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IRD3CH31DD6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies	3,547	-	RFQ	डेटाशीत	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IRD3CH31DF6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies	2,043	-	RFQ	डेटाशीत	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IRD3CH42DB6 DIODE GEN PURP 1.2KV 75A DIE Infineon Technologies	2,476	-	RFQ	डेटाशीत	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	285 ns	1.5 µA @ 1200 V	1200 V	75A	-40°C ~ 150°C	2.7 V @ 75 A
IRD3CH42DD6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies	2,014	-	RFQ	डेटाशीत	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IRD3CH42DF6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies	2,226	-	RFQ	डेटाशीत	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IRD3CH53DB6 DIODE GEN PURP 1.2KV 100A DIE Infineon Technologies	3,520	-	RFQ	डेटाशीत	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	270 ns	2 µA @ 1200 V	1200 V	100A	-40°C ~ 150°C	2.7 V @ 100 A