फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
RBR5L30BDDTE25LOW VF TYPE AUTOMOTIVE SCHOTTKY Rohm Semiconductor |
811 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 30 V | 30 V | 5A | 150°C | 490 mV @ 5 A |
![]() |
SCS212AJTLLDIODE SCHOTTKY 650V 12A TO263AB Rohm Semiconductor |
900 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | - | 0 ns | 240 µA @ 600 V | 650 V | 12A | 175°C (Max) | 1.55 V @ 12 A | |
![]() |
RFN5TF8SFHC9ROHM'S FAST RECOVERY DIODES ARE Rohm Semiconductor |
887 | - |
RFQ |
![]() डेटाशीत |
Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 10 µA @ 800 V | 800 V | 5A | 150°C (Max) | 2.1 V @ 5 A |
![]() |
RFN2L4STE25DIODE SCHOTTKY 400V 1.5A PMDS Rohm Semiconductor |
156 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | 30 ns | 1 µA @ 400 V | 400 V | 1.5A | 150°C (Max) | 1.2 V @ 1.5 A | |
![]() |
RFN20TJ6SGC9DIODE GEN PURP 600V 20A TO220 Rohm Semiconductor |
352 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 140 ns | 10 µA @ 600 V | 600 V | 20A | 150°C (Max) | 1.55 V @ 20 A | |
![]() |
SCS208AJHRTLLDIODE SCHOTTKY 650V 8A TO263AB Rohm Semiconductor |
943 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Not For New Designs | Surface Mount | 291pF @ 1V, 1MHz | 0 ns | 160 µA @ 600 V | 650 V | 8A (DC) | 175°C (Max) | 1.55 V @ 8 A |
![]() |
RFUH5TF6SC9RFUH5TF6S IS SUPER FAST RECOVERY Rohm Semiconductor |
874 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 10 µA @ 600 V | 600 V | 5A | 150°C | 2.8 V @ 5 A | |
![]() |
RFUH20TF6SFHC9ROHM'S FAST RECOVERY DIODES ARE Rohm Semiconductor |
169 | - |
RFQ |
![]() डेटाशीत |
Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 600 V | 600 V | 20A | 150°C (Max) | 2.8 V @ 20 A |
![]() |
SCS304AMCDIODES SILICON CARBIDE Rohm Semiconductor |
573 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 200pF @ 1V, 1MHz | 0 ns | 20 µA @ 650 V | 650 V | 4A (DC) | 175°C (Max) | 1.5 V @ 4 A | |
![]() |
RB085BM-40TLDIODE SCHOTTKY 45V 10A TO252 Rohm Semiconductor |
1,854 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 45 V | 10A | 150°C (Max) | 550 mV @ 5 A | |
![]() |
RFNL20TJ6SGC9DIODE GP 600V 20A TO220ACFP Rohm Semiconductor |
294 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 180 ns | 10 µA @ 600 V | 600 V | 20A | 150°C (Max) | 1.3 V @ 20 A | |
![]() |
SCS315AJTLLDIODES SILICON CARBIDE Rohm Semiconductor |
692 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 750pF @ 1V, 1MHz | 0 ns | 75 µA @ 650 V | 650 V | 15A (DC) | 175°C (Max) | 1.5 V @ 15 A | |
![]() |
RB078BM30SFHTLRB078BM30SFH IS LOW SUB AND HIGH Rohm Semiconductor |
2,495 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 5 µA @ 30 V | 30 V | 5A | 150°C (Max) | 720 mV @ 5 A |
![]() |
SCS304AHGC9SHORTER RECOVERY TIME, ENABLING Rohm Semiconductor |
786 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 200pF @ 1V, 1MHz | 0 ns | 20 µA @ 650 V | 650 V | 4A (DC) | 175°C (Max) | 1.5 V @ 4 A | |
![]() |
RFN5BM3SFHTLSUPER FAST RECOVERY DIODE (AEC-Q Rohm Semiconductor |
1,757 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 350 V | 350 V | 5A | 150°C (Max) | 1.5 V @ 5 A |
![]() |
RFU10TF6SDIODE GEN PURP 600V 10A TO220NFM Rohm Semiconductor |
1,463 | - |
RFQ |
![]() डेटाशीत |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 10 µA @ 600 V | 600 V | 10A | 150°C (Max) | 2.8 V @ 10 A | |
![]() |
SCS212AJHRTLLDIODE SCHOTTKY 650V 12A TO263AB Rohm Semiconductor |
862 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Not For New Designs | Surface Mount | 438pF @ 1V, 1MHz | 0 ns | 240 µA @ 600 V | 650 V | 12A (DC) | 175°C (Max) | 1.55 V @ 12 A |
![]() |
RFUH25TB3SNZC9RFUH25TB3SNZ IS AN ULTRA LOW SWI Rohm Semiconductor |
937 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 10 µA @ 350 V | 350 V | 20A | 150°C | 1.45 V @ 20 A | |
![]() |
RF1501NS3STLDIODE GEN PURP 300V 20A LPDS Rohm Semiconductor |
1,065 | - |
RFQ |
![]() डेटाशीत |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 300 V | 300 V | 20A | 150°C (Max) | 1.5 V @ 20 A | |
![]() |
SCS302APC9DIODE SCHOTTKY 650V 2A TO220-2 Rohm Semiconductor |
452 | - |
RFQ |
![]() डेटाशीत |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 110pF @ 1V, 1MHz | 0 ns | 10.8 µA @ 650 V | 650 V | 2A (DC) | 175°C (Max) | 1.5 V @ 2 A |