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फोटो: निर्माता भाग संख्या उपलब्धता मूल्य मात्रा डेटाशीत Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
GD30MPS12H

GD30MPS12H

DIODE SCHOTTKY 1200V 30A TO-247-

GeneSiC Semiconductor 		2,344 -

RFQ

GD30MPS12H

डेटाशीत

 Tube SiC Schottky MPS™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Silicon Carbide Schottky Active Through Hole 1101pF @ 1V, 1MHz - 20 µA @ 1200 V 1200 V 55A (DC) -55°C ~ 175°C 1.8 V @ 30 A
GD15MPS17H

GD15MPS17H

1700V 15A TO-247-2 SIC SCHOTTKY

GeneSiC Semiconductor 		2,178 -

RFQ

GD15MPS17H

डेटाशीत

 Tube SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1.082nF @ 1V, 1MHz 0 ns 20 µA @ 1700 V 1700 V 36A (DC) -55°C ~ 175°C 1.8 V @ 15 A
GC05MPS33J

GC05MPS33J

3300V 5A TO-263-7 SIC SCHOTTKY M

GeneSiC Semiconductor 		2,890 -

RFQ

Tube SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount - 0 ns - 3300 V 5A (DC) 175°C -
GB05MPS17-247

GB05MPS17-247

SIC DIODE 1700V 5A TO-247-2

GeneSiC Semiconductor 		3,886 -

RFQ

GB05MPS17-247

डेटाशीत

 Tube SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Through Hole 334pF @ 1V, 1MHz 0 ns 6 µA @ 1700 V 1700 V 25A (DC) -55°C ~ 175°C 1.8 V @ 5 A
GB01SLT12-252

GB01SLT12-252

DIODE SILICON 1.2KV 1A TO252

GeneSiC Semiconductor 		11,518 -

RFQ

GB01SLT12-252

डेटाशीत

 Tape & Reel (TR),Cut Tape (CT) SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 69pF @ 1V, 1MHz 0 ns 2 µA @ 1200 V 1200 V 1A -55°C ~ 175°C 1.8 V @ 1 A
GD02MPS12E

GD02MPS12E

1200V 2A TO-252-2 SIC SCHOTTKY M

GeneSiC Semiconductor 		7,194 -

RFQ

GD02MPS12E

डेटाशीत

 Tape & Reel (TR),Cut Tape (CT) SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 73pF @ 1V, 1MHz 0 ns 5 µA @ 1200 V 1200 V 8A (DC) -55°C ~ 175°C 1.8 V @ 2 A
GE04MPS06E

GE04MPS06E

650V 4A TO-252-2 SIC SCHOTTKY MP

GeneSiC Semiconductor 		6,982 -

RFQ

GE04MPS06E

डेटाशीत

 Tape & Reel (TR),Cut Tape (CT) SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 186pF @ 1V, 1MHz 0 ns 5 µA @ 650 V 650 V 12A (DC) -55°C ~ 175°C 1.35 V @ 4 A
GE06MPS06E

GE06MPS06E

650V 6A TO-252-2 SIC SCHOTTKY MP

GeneSiC Semiconductor 		2,500 -

RFQ

GE06MPS06E

डेटाशीत

 Tape & Reel (TR),Cut Tape (CT) SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 279pF @ 1V, 1MHz - - 650 V 17A (DC) -55°C ~ 175°C -
1N3883

1N3883

DIODE GEN PURP 400V 6A DO4

GeneSiC Semiconductor 		153 -

RFQ

1N3883

डेटाशीत

 Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 15 µA @ 50 V 400 V 6A -65°C ~ 150°C 1.4 V @ 6 A
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