ट्रांजिस्टर - JFETs

फोटो: निर्माता भाग संख्या उपलब्धता मूल्य मात्रा डेटाशीत Packaging Series ProductStatus FETType Voltage-Breakdown(V(BR)GSS) DraintoSourceVoltage(Vdss) Current-Drain(Idss)@Vds(Vgs=0) CurrentDrain(Id)-Max Voltage-Cutoff(VGSoff)@Id InputCapacitance(Ciss)(Max)@Vds Resistance-RDS(On) Power-Max OperatingTemperature MountingType
UJ3N120035K3S

UJ3N120035K3S

1200V 35 MOHM SIC JFET, G3, N-ON

UnitedSiC
2,010 -

RFQ

UJ3N120035K3S

डेटाशीत

Tube - Active N-Channel 1200 V 1200 V - 63 A - 2145pF @ 100V 45 mOhms 429 W -55°C ~ 175°C (TJ) Through Hole
UF3N170400B7S

UF3N170400B7S

JFET 1700V SIC

UnitedSiC
3,190 -

RFQ

UF3N170400B7S

डेटाशीत

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel 1.7 V 1.7 V 2.2 µA @ 1.7 V 6.8 A - 225pF @ 100V 500 mOhms 68 W -55°C ~ 175°C (TJ) Surface Mount
UJ3N065080K3S

UJ3N065080K3S

650V 80 MOHM SIC JFET, G3, N-ON

UnitedSiC
2,750 -

RFQ

UJ3N065080K3S

डेटाशीत

Tube - Active N-Channel 650 V 650 V - 32 A - 630pF @ 100V 95 mOhms 190 W -55°C ~ 175°C (TJ) Through Hole
UJ3N120070K3S

UJ3N120070K3S

1200V 70 MOHM SIC JFET, G3, N-ON

UnitedSiC
2,625 -

RFQ

UJ3N120070K3S

डेटाशीत

Tube - Active N-Channel 1200 V 1200 V - 33.5 A - 985pF @ 100V 90 mOhms 254 W -55°C ~ 175°C (TJ) Through Hole
UJ3N065025K3S

UJ3N065025K3S

650V 25 MOHM SIC JFET, G3, N-ON

UnitedSiC
2,364 -

RFQ

UJ3N065025K3S

डेटाशीत

Tube - Active N-Channel 650 V 650 V - 85 A - 2360pF @ 100V 33 mOhms 441 W -55°C ~ 175°C (TJ) Through Hole
UJ3N120065K3S

UJ3N120065K3S

1200V/65MOHM, SIC, N-ON JFET, G3

UnitedSiC
3,515 -

RFQ

UJ3N120065K3S

डेटाशीत

Tube - Active N-Channel 1.2 V 1.2 V 5 µA @ 1.2 V 34 A - 1008pF @ 100V 55 mOhms 254 W -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ दैनिक औसत RFQ
20,000.000
20,000.000 मानक उत्पाद इकाई
1800+
1800+ विश्वभर के निर्माता
15,000+
15,000+ स्टॉक वेयरहाउस
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