निर्माता | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
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फोटो: | निर्माता भाग संख्या | उपलब्धता | मूल्य | मात्रा | डेटाशीत | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
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19MT050XFMOSFET 4N-CH 500V 31A MTP Vishay General Semiconductor - Diodes Division |
3,776 | - |
RFQ |
![]() डेटाशीत |
Bulk | HEXFET® | Obsolete | 4 N-Channel (Half Bridge) | Standard | 500V | 31A | 220mOhm @ 19A, 10V | 6V @ 250µA | 160nC @ 10V | 7210pF @ 25V | 1140W | -40°C ~ 150°C (TJ) | Chassis Mount |