NTE Electronics, Inc|ऑप्टिकल सेंसर - फोटो डिटेक्टर - CdS सेल - Page 1

निर्माता भाग संख्या	उपलब्धता	मूल्य	मात्रा	डेटाशीत	Packaging	Series	ProductStatus	Wavelength	Voltage-Max	RiseTime(Typ)	FallTime(Typ)	CellResistance(Min)@Dark	CellResistance@Illuminance	OperatingTemperature	MountingType
02-LDR3 PHOTOCELL 100-200K OHM NTE Electronics, Inc	3,224	-	RFQ	डेटाशीत	Bag	LDR	Active	540nm	100VDC	-	-	-	100 ~ 200kOhms @ 10 lux	-30°C ~ 70°C (TA)	Through Hole
02-LDR1 PHOTOCELL 50-100K OHM NTE Electronics, Inc	3,734	-	RFQ	डेटाशीत	Bag	LDR	Active	540nm	100VDC	-	-	-	50 ~ 100kOhms @ 10 lux	-30°C ~ 70°C (TA)	Through Hole
02-LDR4 5MM LDR 30K-50K OHM NTE Electronics, Inc	3,001	-	RFQ	डेटाशीत	Bag	LDR	Active	540nm	150VDC	20 ms	30 ms	3 MOhms @ 10 s	30 ~ 50kOhm @ 10 lux	-30°C ~ 70°C (TA)	Through Hole
02-LDR15 12MM LDR 50K-100K OHM NTE Electronics, Inc	3,802	-	RFQ	डेटाशीत	Bag	LDR	Active	560nm	250VDC	30 ms	30 ms	8 MOhms @ 10 s	50 ~ 100kOhm @ 10 lux	-30°C ~ 70°C (TA)	Through Hole
02-LDR14 10MM LDR 30K-50K OHM NTE Electronics, Inc	2,007	-	RFQ	डेटाशीत	Bag	LDR	Active	560nm	250VDC	30 ms	30 ms	5 MOhms @ 10 s	30 ~ 50kOhm @ 10 lux	-30°C ~ 70°C (TA)	Through Hole
02-LDR13 12MM LDR 10K-20K OHM NTE Electronics, Inc	2,630	-	RFQ	डेटाशीत	Bag	LDR	Active	560nm	250VDC	30 ms	30 ms	2 MOhms @ 10 s	10 ~ 20kOhm @ 10 lux	-30°C ~ 70°C (TA)	Through Hole
02-LDR12 12MM LDR 5K-10K OHM NTE Electronics, Inc	3,127	-	RFQ	डेटाशीत	Bag	LDR	Active	560nm	250VDC	30 ms	30 ms	1 MOhms @ 10 s	5 ~ 10kOhm @ 10 lux	-30°C ~ 70°C (TA)	Through Hole
02-LDR22 20MM LDR 30K-50K OHM NTE Electronics, Inc	692	-	RFQ	डेटाशीत	Bag	LDR	Active	560nm	500VDC	30 ms	30 ms	5 MOhms @ 10 s	30 ~ 50kOhm @ 10 lux	-30°C ~ 70°C (TA)	Through Hole
02-LDR23 20MM LDR 50K-100K OHM NTE Electronics, Inc	684	-	RFQ	डेटाशीत	Bag	LDR	Active	560nm	500VDC	30 ms	30 ms	8 MOhms @ 10 s	50 ~ 100kOhm @ 10 lux	-30°C ~ 70°C (TA)	Through Hole
02-LDR20 20MM LDR 5K-10K OHM NTE Electronics, Inc	674	-	RFQ	डेटाशीत	Bag	LDR	Active	560nm	500VDC	30 ms	30 ms	1 MOhms @ 10 s	5 ~ 10kOhm @ 10 lux	-30°C ~ 70°C (TA)	Through Hole
02-LDR21 20MM LDR 10K-20K OHM NTE Electronics, Inc	596	-	RFQ	डेटाशीत	Bag	LDR	Active	560nm	500VDC	30 ms	30 ms	2 MOhms @ 10 s	10 ~ 20kOhm @ 10 lux	-30°C ~ 70°C (TA)	Through Hole
02-LDR2 PHOTOCELL 5-10K OHM NTE Electronics, Inc	474	-	RFQ	डेटाशीत	Bag	LDR	Active	540nm	100VDC	-	-	-	5 ~ 10kOhms @ 10 lux	-30°C ~ 70°C (TA)	Through Hole